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RL78/G1A
CHAPTER 30 ELECTRICAL SPECIFICATIONS (G: INDUSTRIAL APPLICATIONS T
A
=
−
40 to +105
°
C)
R01UH0305EJ0200 Rev.2.00 950
Jul 04, 2013
30.7 Data Memory STOP Mode Low Supply Voltage Data Retention Characteristics
(T
A = −40 to +105°C, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Data retention supply voltage VDDDR 1.44
Note
3.6 V
Note The value depends on the POR detection voltage. When the voltage drops, the data is retained before a POR
reset is effected, but data is not retained when a POR reset is effected.
V
DD
STOP instruction execution
Standby release signal
(inerrupt request)
STOP mode
Data hold mode
V
DDDR
Operation mode
30.8 Flash Memory Programming Characteristics
(TA = −40 to +105°C, 2.4 V ≤ VDD ≤ 3.6 V, VSS = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
CPU/peripheral hardware clock
frequency
f
CLK 2.4 V ≤ VDD ≤ 3.6 V 1 32 MHz
Number of code flash rewrites
Notes 1, 2, 3
Retained for 20 years TA = 85°C 1,000
Retained for 1 years TA = 25°C 1,000,000
Retained for 5 years TA = 85°C 100,000
Number of data flash rewrites
Notes 1, 2, 3
C
erwr
Retained for 20 years T
A = 85°C 10,000
Times
Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite.
The retaining years are until next rewrite after the rewrite.
2. When using flash memory programmer and Renesas Electronics self programming library
3. These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas
Electronics Corporation.
30.9 Dedicated Flash Memory Programmer Communication (UART)
(T
A = −40 to +105°C, 2.4 V ≤ EVDD0 ≤ VDD ≤ 3.6 V, VSS = EVSS0 = 0 V)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Transfer rate During flash memory programming 115.2 k 1 M bps
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