Renesas g1a Answering Machine User Manual


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RL78/G1A CHAPTER 29 ELECTRICAL SPECIFICATIONS (T
A = 40 to +85°C)
R01UH0305EJ0200 Rev.2.00 883
Jul 04, 2013
(8)
Communication at different potential (1.8V, 2.5 V) (CSI mode) (master mode, SCKp... internal clock output) (1/2)
(TA = 40 to +85°C, 1.8 V EVDD0 VDD 3.6 V, VSS = EVSS0 = 0 V)
HS
Note 1
LS
Note 2
LV
Note 3
Parameter Symbol Conditions
MIN. MAX. MIN. MAX. MIN. MAX.
Unit
2.7 V EVDD0
3.6 V,
2.3 V V
b 2.7 V,
C
b = 30 pF, Rb = 2.7 kΩ
t
KCY1 4/fCLK 500 1150 1150 ns SCKp cycle time tKCY1
1.8 V EV
DD0 < 3.3 V,
1.6 V V
b 2.0 V
Note 4
,
C
b = 30 pF, Rb = 5.5 kΩ
tKCY1 4/fCLK 1150 1150 1150
ns
2.7 V EVDD0
3.6 V, 2.3 V Vb 2.7 V,
C
b = 30 pF, Rb = 2.7 kΩ
t
KCY1/2
170
t
KCY1/2
170
t
KCY1/2
170
ns
SCKp high-level width tKH1
1.8 V EV
DD0 < 3.3 V, 1.6 V Vb 2.0 V
Note 4
,
C
b = 30 pF, Rb = 5.5 kΩ
t
KCY1/2
458
t
KCY1/2
458
t
KCY1/2
458
ns
2.7 V EVDD0
3.6 V, 2.3 V Vb 2.7 V,
C
b = 30 pF, Rb = 2.7 kΩ
t
KCY1/2
18
tKCY1/2
50
tKCY1/2
50
ns
SCKp low-level width tKL1
1.8 V EV
DD0 < 3.3 V, 1.6 V Vb 2.0 V
Note 4
,
C
b = 30 pF, Rb = 5.5 kΩ
t
KCY1/2
50
t
KCY1/2
50
t
KCY1/2
50
ns
Notes 1. HS is condition of HS (high-speed main) mode.
2. LS is condition of LS (low-speed main) mode.
3. LV is condition of LV (low-voltage main) mode.
4. Use it with EV
DD0 Vb.
Caution Select the TTL input buffer for the SIp pin and the N-ch open drain output (V
DD tolerance (When 25- to
48-pin products)/EV
DD tolerance (When 64-pin products)) mode for the SOp pin and SCKp pin by using
port input mode register g (PIMg) and port output mode register g (POMg). For V
IH and VIL, see the DC
characteristics with TTL input buffer selected.
Remarks 1. R
b[Ω]: Communication line (SCKp, SOp) pull-up resistance, Cb[F]: Communication line (SCKp, SOp) load
capacitance, Vb[V]: Communication line voltage
2. p: CSI number (p = 00, 10, 20), m: Unit number , n: Channel number (mn = 00, 02, 10),
g: PIM and POM number (g = 0, 1)
3. CSI01, CSI11, and CSI21 cannot communicate at different potential. Use other CSI for communication at
different potential.
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