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MTM86628
SJF00111AED 4
This product complies with the RoHS Directive (EU 2002/95/EC).
P
D
T
a
I
D
V
DS
R
DS(on)
V
GS
R
DS(on)
I
D
C
X
V
DS
0
40
80
160120
0
400
200
600
MTM86628_ P
D
-T
a
Total power dissipation P
D
(mW)
Ambient temperature T
a
(°C)
0 − 0.2 − 0.4 −1.0− 0.6 − 0.8
0
− 0.02
− 0.04
− 0.06
− 0.08
− 0.10
MTM86628_ I
D
-V
DS
Drain current I
D
(A)
Drain-source voltage V
DS
(V)
−1.4 V
−1.2 V
V
GS
= −1.6 V
0
−2 −10−8−6−4
0.1
0.2
0.3
0.4
0.5
MTM86628_ R
DS(on)
-V
GS
Drain-source ON resistance R
DS(on)
(Ω)
Gate-source voltage V
GS
(V)
I
D
= − 0.5 A
− 0.1 −1.0
0
0.1
0.2
0.3
0.4
0.5
MTM86628_ R
DS(on)
-I
D
Drain-source ON resistance R
DS(on)
(Ω)
Drain current I
D
(A)
V
GS
= 2.5 V
4.0 V
−50 −15 −20−10
0
20
40
60
120
100
80
MTM86628_ C
X
-V
DS
Drain-source voltage V
DS
(V)
Short-circuit input capacitance (Common source)
C
iss
,
Short-circuit output capacitance (Common source)
C
oss
,
Reverse transfer capacitance (Common source) C
rss
(pF)
C
iss
C
oss
C
rss
Characteristics charts of FET
Characteristics charts of SBD
I
F
V
F
I
R
V
R
C
t
V
R
0 0.2 0.60.4
10
3
1
10
10
2
MTM86628_I
F
-V
F
Forward current I
F
(m
A
)
Forward voltage V
F
(
V
)
T
a
= 75°C
−25°C
25°C
0 9 1263 15
10
−1
1
10
10
3
10
2
10
4
MTM86628_I
R
-V
R
Reverse current I
R
(µ
A
)
Reverse voltage V
R
(V)
T
a
= 75°C
−25°C
25°C
0 2010 155
0
40
20
60
80
100
MTM86628_C
t
-V
R
Terminal capacitance C
t
(pF)
Reverse voltage V
R
(
V
)