Zener Diodes
1
Publication date: November 2005 SKE00011DED
MAZLxxxH Series
Silicon planar type
For surge absorption circuit
■ Features
•
Four elements anode-common type
•
Power dissipation P
D
: 200 mW
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Power dissipation
*
P
D
200 mW
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
■ Common Electrical Characteristics T
a
= 25°C ± 3°C
Note)
*
:P
D
= 200 mW achieved with a printed circuit board.
Parameter Symbol Conditions Min Typ Max Unit
Zener voltage
*
V
Z
I
Z
Specified value V
Zener rise operating resistance R
ZK
I
Z
Specified value Ω
Zener operating resistance R
Z
I
Z
Specified value Ω
Reverse current I
R
V
R
Specified value µA
2.90
1.9
±0.1
0.16
+0.10
–0.06
2.8
+0.2
–0.3
1.1
+0.3
–0.1
1.1
0 to 0.1
+0.2
–0.1
1.50
(0.65)
0.4
±0.2
+0.25
–0.05
(0.95) (0.95)
0.30
+0.10
–0.05
543
12
+0.20
–0.05
5˚
10˚
Refer to the list of the
electrical characteristics
within part numbers
Internal Connection
5
2
43
1
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage: ±10 kV
Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
V
Z
guaranted 20 ms after current flow.
1: Cathode 1 4: Anode
2: Cathode 2 5: Cathode 4
3: Cathode 3
EIAJ: SC-74A Mini5-G1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
