Zener Diodes
Publication date: September 2005 SKE00028AED 1
MALT062H
Silicon planar type
For ESD protection
Features
Electrostatic discharge ESD: ±30 kV
Four elements anode-common type
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Total power dissipation
*
1
P
D
150 mW
Junction temperature
T
j
150
°C
Storage temperature
T
stg
–55 to +150
°C
Electrostatic discharge
*
2
ESD
±30
kV
Note)
*
1 : P
D
= 150 mW achieved with a printed circuit board.
*
2 : Test method: IEC61000-4-2
(C = 150 pF, R = 330
Ω, Contact discharge: 10 times)
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Breakdown voltage
*
V
BR
I
R
= 1 mA 5.8 6.2 6.6 V
Reverse current
I
R
V
R
= 4.0 V 1.0
µA
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz 55 pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. The temperature must be controlled 25°C for V
BR
mesurement.
V
BR
value measured at other temperature must be adjusted to V
BR
(25°C)
3.
*
: V
BR
guaranted 20 ms after current flow.
Unit: mm
1: Cathode 1
2: Cathode 2
3: Anode 1, 2
EIAJ: SC-81 SSMini3-F2 Package
0.28±0.05
3
1 2
0.28±0.05
(0.80)
1.60
+0.05
–0.03
0.12
+0.05
–0.02
0.60
+0.05
–0.03
(0.80)
(0.51) (0.51)
0 to 0.1
(0.15)
3°
(0.44)(0.44)
0.88
(0.375)
+0.05
–0.03
0.80±0.05
(0.80)
1.60±0.05
3°
Marking Symbol: 6.2E
Internal Connection
This product complies with the RoHS Directive (EU 2002/95/EC).
