Zener Diodes
Publication date: October 2008 SKE00047AED 1
This product complies with RoHS Directive (EU 2002/95/EC).
MALHxxxYG Series
Silicon planar type
For constant voltage, constant current, waveform clipper and surge absorption circuit
Features
Extremely low noise voltage caused from the diode
Extremely good rising performance (in the low-current range)
Independent wiring of two element
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Repetitive peak forward current I
FRM
200 mA
Total power dissipation
*
P
T
150 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
–55 to +150
°C
Note)
*
: P
T
= 150 mW achieved with a printed circuit board.
Common Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 10 mA 0.9 1.0 V
Zener voltage
*
1
V
Z
I
Z
Specified value V
Zener rise operating resistance R
ZK
I
Z
Specified value
Refer to the list of the
electrical characteristics
within part numbers
W
Zener operating resistance R
Z
I
Z
Specified value
W
Reverse current I
R
V
R
Specified value
mA
Temperature coefficient of zener voltage
*
2
S
Z
I
Z
Specified value mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. The temperature must be controlled 25°C for V
Z
mesurement.
V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
4.
*
1
: V
Z
guaranted 20 ms after current flow.
*
2 : T
j
= 25°C to 150°C
Package
Code
SMini4-F2
Pin Name
1: Anode 1 3: Cathode 2
2: Anode 2 4: Cathode 1
Marking symbol
Refer to the list of the electrical
characteristics within part numbers
