Switching Diodes
1
Publication date: March 2004 SKF00051BED
Note)
*
1: Value for single diode
*
2: t = 1 s
MA6X121 (MA121)
Silicon epitaxial planar type
For switching circuit
■ Features
• Three isolated elements contained in one package, allowing high-
density mounting
• Short reverse recovery time t
rr
• Small terminal capacitance C
t
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage V
R
80 V
Maximum peak reverse voltage V
RM
80 V
Forward current
*
1
I
F
100 mA
Peak forward current
*
1
I
FM
225 mA
Non-repetitive peak forward I
FSM
500 mA
surge current
*
1, 2
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 100 mA 1.2 V
Reverse voltage V
R
I
R
= 100 µA80V
Reverse current I
R
V
R
= 75 V 100 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 2 pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V 3 ns
I
rr
= 0.1 I
R
, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: M2D
1: Cathode 1
2: Cathode 2
3: Cathode 3
4: Anode 3
5: Anode 2
6: Anode 1
EIAJ: SC-74 Mini6-G1 Package
654
123
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
2.90
1.9
±0.1
0.16
+0.10
–0.06
2.8
+0.2
–0.3
1.1
+0.3
–0.1
1.1
0 to 0.1
+0.2
–0.1
1.50
(0.65)
0.4
±0.2
+0.25
–0.05
(0.95)
0.30
+0.10
–0.05
0.50
+0.10
–0.05
(0.95)
654
132
+0.20
–0.05
5˚
10˚
Internal Connection
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.
*
: t
rr
measurement circuit
Note) The part number in the parenthesis shows conventional part number.
This product complies with the RoHS Directive (EU 2002/95/EC).
