Schottky Barrier Diodes (SBD)
Publication date: August 2008 SKH00227BED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA6J786Y
Silicon epitaxial planar type
For high speed switching circuits
Overview
MA6J786Y is optimal for general circuit supplies.
The assembly of 3 MA3X786 elements in parallel in one package.
Features
Forward current (Average) I
F(AV)
= 100 mA rectification is possible
Short reverse recovery time t
rr
, optimum for high-frequency rectification
Low forward voltage V
F
and good rectification efficiency
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Maximum peak reverse voltage V
RM
30 V
Forward current (Average) I
F(AV)
100 mA
Peak forward current I
FM
300 mA
Non-repetitive peak forward surge
current
*
I
FSM
1 A
Junction temperature T
j
125
°C
Storage temperature T
stg
-55 to +125
°C
Note)
*
: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F1
I
F
= 100 mA 0.55 V
Reverse current I
R
V
R
= 30 V 15
mA
Terminal capacitance C
t
V
R
= 0, f = 1 MHz 20 pF
Reverse recovery time
*
1
t
rr
I
F
= I
R
= 100 mA, I
rr
= 0.1 × I
R
,
R
L
= 100 W
1.0 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current
from the operating equipment.
3.
*
1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Package
Code
SMini6-F1
Pin Name
1: Cathode 1 4: Anode 3
2: Cathode 2 5: Anode 2
3: Cathode 3 6: Anode 1
Marking Symbol: M8C
Internal Connection
3
(C3)
(A3)
4
1
(C1)
2
(C2)
(A1)
6
(A2)
5
