Schottky Barrier Diodes (SBD)
1
Publication date: February 2008 SKH00111CED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA4ZD14
Silicon epitaxial planar type
For high speed switching
■ Features
•
Two isolated elements are contained in one package, allowing
high-density mounting
•
Low forward voltage: V
F
< 0.40 V
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
20 V
Repetitive peak reverse-voltage V
RRM
20 V
Forward current Single I
F
100 mA
Double
*
1
75
Peak forward Single I
FM
300 mA
current Double
*
1
225
Non-repetitive peak
Single I
FSM
1A
forward surge current
*
2
Double
*
1
0.75
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current I
R
V
R
= 10 V 20 µA
Forward voltage V
F1
I
F
= 5 mA 0.27 V
V
F2
I
F
= 100 mA 0.40
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 25 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA 3 ns
I
rr
= 10 mA, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Bias Insertion Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
W.F. Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note)
*
1: Value of each diode in double diodes used.
*
2:
The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz. 4.
*
: t
rr
measurement circuit
12
3
4
■ Package
•
Code
SMini4-F1
•
Pin Name
1:Anode 1 3:Cathode 2
2:Anode 2 4:Cathode 1
■ Marking Symbol: M5D
■ Internal Connection
