Switching Diodes
1
Publication date: July 2004 SKF00067AED
MA4S111
Silicon epitaxial planar type
For switching circuits
■ Features
•
Allowing high-density mounting
•
Short reverse recovery time t
rr
•
Small terminal capacitance C
t
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
80 V
Maximum peak reverse voltage V
RM
80 V
Forward current Single I
F
100 mA
Double 75
Repetitive peak Single I
FRM
225 mA
forward current Double 170
Junction temperature T
j
150 °C
Operating ambient temperature T
opr
−30 to +85 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 100 mA 0.95 1.2 V
Reverse voltage V
R
I
R
= 100 µA80V
Reverse current I
R
V
R
= 75 V 100 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 0.6 2 pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V 3 ns
I
rr
= 0.1 I
R
, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Internal Connection
4
1
3
2
1: Anode 1
2: Anode 2
3: Cathode 2
4: Cathode 1
SSMini4-F1 Package
Unit: mm
Marking Symbol: M1B
1.6
±0.05
5˚
1.0
±0.05
1.15
±0.05
0.01
±0.01
1.6
±0.1
0.25
±0.05
0.55
±0.1
0.10
±0.03
12
5˚
(0.225)
(0.15)
43
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.
*
: t
rr
measurement circuit
This product complies with the RoHS Directive (EU 2002/95/EC).
