Schottky Barrier Diodes (SBD)
1
Publication date: November 2007 SKH00217AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3Z7930G
Silicon epitaxial planar type
For super high speed switching
For small current rectification
■ Features
•
Two MA3Z792 (MA792) is contained in one package (series con-
nection)
•
I
F(AV)
= 100 mA rectification is possible
•
Optimum for high frequency rectification because of its short
reverse recovery time t
rr
•
Low forward voltage V
F
and good rectification efficiency
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 100 mA 0.55 V
Reverse current I
R
V
R
= 30 V 15 µA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 20 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA 2.0 ns
I
rr
= 10 mA, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Repetitive peak reverse voltage V
RRM
30 V
Forward current Single I
F
100 mA
Series 70
Peak forward Single I
FM
300 mA
current Series 200
Non-repetitive peak forward I
FSM
1A
surge current
*
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz 4.
*
: t
rr
measurement circuit
Note)
*
: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
■ Package
•
Code
SMini3-F2
•
Pin Name
1:Anode 1
2: Cathode 2
3: Cathode 1
Anode 2
■ Marking Symbol: M4A
■ Internal Connection
12
3
