Schottky Barrier Diodes (SBD)
1
Publication date: April 2004 SKH00093CED
MA3XD15
Silicon epitaxial planar type
For high frequency rectification
■ Features
• Low forward voltage: V
F
< 0.45 V
• Small reverse current: I
R
< 100 µA
• Forward current (Average) I
F(AV)
= 1 A rectification is possible
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
20 V
Repetitive peak reverse voltage V
RRM
25 V
Non-repetitive peak forward I
FSM
3A
surge current
*2
Forward current (Average)
*
1
I
F(AV)
1.0 A
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 1.0 A 0.45 V
Reverse current I
R
V
R
= 20 V 100 µA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 120 pF
■ Electrical Characteristics T
a
= 25°C ± 3°C
Internal Connection
Marking Symbol: M5N
12
3
Unit: mm
1: Anode
2: N.C.
3: Cathode
EIAJ: SC-59 Mini3-G1 Package
0.40
+0.10
–0.05
(0.65)
1.50
+0.25
–0.05
2.8
+0.2
–0.3
2
1
3
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4±0.2
5˚
10˚
0 to 0.1
1.1
+0.2
–0.1
1.1
+0.3
–0.1
Note)
*
1: Mounted on an alumina PC board
*
2: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
This product complies with the RoHS Directive (EU 2002/95/EC).
