Fast Recovery Diodes (FRD)
1
Publication date: February 2008 SKJ00014CED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3U649
Silicon planar type (cathode common)
For high-frequency rectification
■ Features
• Small U-type package for surface mounting
• Low-loss type with fast reverse recovery time t
rr
• Cathode common dual type
■ Absolute Maximum Ratings
D.U.T
t
rr
0.1 × I
R
I
F
I
R
50 Ω
5.5 Ω
50 Ω
Parameter Symbol Rating Unit
Repetitive peak reverse voltage V
RRM
200 V
Non-repetitive peak reverse V
RSM
200 V
surge voltage
Forward current (Average)
*
1
I
F(AV)
5A
Non-repetitive peak forward
I
FSM
40 A
surge current
*
2
Junction temperature T
j
−40 to +150 °C
Storage temperature T
stg
−40 to +150 °C
Note)
*
1: T
C
= 25°C
*
2: Half sine-wave; 10 ms/cycle
■ Electrical Characteristics T
a
= 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 2.5 A, T
C
= 25°C 0.98 V
Repetitive peak reverse current I
RRM1
V
RRM
= 200 V, T
C
= 25°C20µA
I
RRM2
V
RRM
= 200 V, T
j
= 150°C2mA
Reverse recovery time
*
2
t
rr
I
F
= 1 A, I
R
= 1 A 30 ns
Thermal resistance (j-c)
*
1
R
th(j-c)
12.5 °C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2.
*
1: T
C
= 25°C
*
2: t
rr
measurement circuit
■ Package
•
Code
U-G2
•
Pin Name
1: Anode
2: Cathode (Common)
3: Anode
