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Switching Diodes
1
Publication date: October 2007 SKF00087AED
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S1370G
Silicon epitaxial planar type
For high-speed switching circuits
■ Features
• Two isolated elements contained in one package, allowing high-
density mounting
• Two diodes are connected in series in the package
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 100 mA 1.2 V
Reverse voltage V
R
I
R
= 100 µA80V
Reverse current I
R
V
R
= 75 V 100 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 2 pF
Reverse recovery time
*
t
rr
I
F
= 10 mA, V
R
= 6 V 3 ns
I
rr
= 0.1 I
R
, R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
1
3
2
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 10 mA
V
R
= 6 V
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 0.1 I
R
t
r
t
p
t
rr
V
R
I
F
t
t
A
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.
*
: t
rr
measurement circuit
Note)
*
:t = 1 s
Parameter Symbol Rating Unit
Reverse voltage V
R
80 V
Maximum peak reverse voltage
V
RM
80 V
Forward current Single I
F
100 mA
Series 65
Peak forward
Single I
FM
225 mA
current
Series 145
Non-repetitive peak
Single I
FSM
500 mA
forward surge current
*
Series 325
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
■ Package
•
Code
SSMini3-F3
•
Pin Name
1:Anode 1
2:Cathode 2
3:Cathode 1
Anode 2
■ Marking Symbol: MS
■ Internal Connection