Schottky Barrier Diodes (SBD)
1
Publication date: January 2004 SKH00045BED
MA3D755 (MA7D55)
Silicon epitaxial planar type (cathode common)
For switching mode power supply
■ Features
•
Low forward voltage V
F
•
High dielectric breakdown voltage: > 5 kV
•
Easy-to-mount, due to its V cut lead end
■ Absolute Maximum Ratings T
C
= 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage V
RRM
60 V
Forward current (Average) I
F(AV)
5A
Non-repetitive peak forward I
FSM
90 A
surge current
*
Junction temperature T
j
−40 to +125 °C
Storage temperature T
stg
−40 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 2.5 A 0.58 V
Reverse current I
R
V
R
= 60 V 1 mA
Thermal resistance (j-c) R
th(j-c)
3.0 °C/W
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
1.4±0.2
1.6±0.2
0.8±0.1 0.55±0.15
2.54±0.30
5.08±0.50
123
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0±0.5
9.9±0.3
15.0±0.513.7±0.2
4.2±0.2
Solder Dip
Note)
*
: Half sine wave; 10 ms/cycle
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 200 MHz.
Note) The part number in the parenthesis shows conventional part number.
1: Anode
2: Cathode
3: Anode
TO-220D-A1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
