Switching Diodes
1
Publication date: November 2003 SKF00016BED
MA2Z001
Silicon epitaxial planar type
For switching circuits
■ Features
• High breakdown voltage: V
R
= 200 V
• Small terminal capacitance C
t
• Suitable for high-density mounting
■ Absolute Maximum Ratings T
a
= 25°C
5˚
5˚
1.25
±0.1
0.7
±0.1
2.5
±0.2
1.7
±0.1
0.4
±0.1
0 to 0.1
(0.15)
0.16
0.5
±0.1
1
2
+0.1
–0.06
0.35
±0.1
0 to 0.1
Unit: mm
1 : Anode
2 : Cathode
EIAJ : SC-76 SMini2-F1 Package
Marking Symbol: 1K
Parameter Symbol Rating Unit
Reverse voltage V
R
200 V
Repetitive peak reverse voltage V
RRM
250 V
Forward current (Average) I
F(AV)
100 mA
Repetitive peak forward current I
FRM
225 mA
Non-repetitive peak forward I
FSM
500 mA
surge current
*
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Note)
*
:t = 1 s
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 100 mA 1.2 V
Reverse current I
R
V
R
= 200 V 1.0 µA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 3.0 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 10 mA 60 ns
I
rr
= 1 mA , R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring method for diodes.
2. Absolute frequency of input and output is 20 MHz.
3.
*
: t
rr
measurement circuit
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= I
R
= 10 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
This product complies with the RoHS Directive (EU 2002/95/EC).
