Schottky Barrier Diodes (SBD)
Publication date: November 2008 SKH00238AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2YJ50
Silicon epitaxial planar type
For rectification
Features
Forward current (Average) I
F(AV)
= 3.0 A rectification is possible.
Low forward voltage V
F
: 0.55 V (max.)
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
40 V
Forward current (Average)
*
1
I
F(AV)
3.0 A
Non-repetitive peak forward surge current
I
FSM
50
*
2
A
15
*
3
A
Junction temperature T
j
150
°C
Storage temperature T
stg
–55 to +150
°C
Note)
*
1: Lead temperature: Tl = 60°C, DC wave on
*
2: Rectangle wave 1 cycle (Pulse width = 50 ms, non-repetitive peak current)
*
3: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage
V
F1
I
F
= 1.0 A 0.35 0.44
V
V
F2
I
F
= 3.0 A 0.47 0.55
Reverse current I
R
V
R
= 40 V 40 200
mA
Terminal capacitance C
t
V
R
= 10 V, f = 1 MHz 70 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA, I
rr
= 10 mA,
R
L
= 100 W
25 ns
Thermal resistance (j-a) R
th(j-a)
Mounted on an alumina PC board 110
°C/W
Mounted on a glass epoxy PC board 160
Thermal resistance (j-l) R
th(j-l)
60
°C/W
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3.
*
: t
rr
measurement circuit
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Package
Code
Mini2-F1
Pin Name
1: Anode
2: Cathode
Marking Symbol: 3D
