Fast Recovery Diodes (FRD)
Publication date: October 2006 SKJ00016CED 1
This product complies with RoHS Directive (EU 2002/95/EC).
MA2YF80
Silicon epitaxial planar type
For high speed switching circuits
For strobe light circuits (high voltage rectification)
Features
High repetitive peak reverse voltage V
RRM
Short reverse recovery time t
rr
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Repetitive peak reverse voltage
V
RRM
800 V
Non-repetitive peak reverse surge voltage
V
RSM
800 V
Forward current
I
F
200 mA
Non-repetitive peak forward surge current
*
I
FSM
1 A
Junction temperature
T
j
–40 to +150
°C
Storage temperature
T
stg
–40 to +150
°C
Note)
*
: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage
V
F
I
F
= 200 mA 2.5 V
Reverse current
I
RRM1
V
RRM
= 400 V 1
µA
I
RRM2
V
RRM
= 800 V 20
Terminal capacitance
C
t
V
R
= 0 V, f = 1 MHz 2 pF
Reverse recovery time
*
t
rr
I
F
= 100 mA, I
R
= 200 mA
I
rr
= 20 mA, R
L
= 100 Ω
20 45 ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3.
*
: t
rr
measurement circuit
