Schottky Barrier Diodes (SBD)
1
Publication date: April 2003 SKH00030BED
MA2SE01
Silicon epitaxial planar type
For mixer
■ Features
• High-frequency wave detection is possible
• Low forward voltage V
F
• Small terminal capacitance C
t
• SS-Mini type 2-pin package
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
20 V
Maximum peak reverse voltage V
RM
20 V
Forward current I
F
35 mA
Peak forward current I
FM
100 mA
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F1
I
F
= 1 mA 0.41 V
V
F2
I
F
= 35 mA 1.0 V
Reverse current I
R
V
R
= 15 V 200 nA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 1.2 pF
Forward dynamic resistance r
f
I
F
= 5 mA 40 Ω
■ Electrical Characteristics T
a
=
25°C ±
3°C
Marking Symbol: 4L
1: Anode
2: Cathode
EIAJ: SC-79 SSMini2-F1 Package
Unit: mm
0.80
+0.05
–0.03
0.60
+0.05
–0.03
0.12
+0.05
–0.02
1.20
+0.05
–0.03
0
+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5˚
5˚
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Rated input/output frequency: 2 GHz
This product complies with the RoHS Directive (EU 2002/95/EC).
