Schottky Barrier Diodes (SBD)
1
Publication date: October 2003 SKH00130AED
MA2SD30
Silicon epitaxial planar type
For super high speed switching
■ Features
• Small reverse current: I
R
< 2 µA (at V
R
= 30 V)
• Optimum for high frequency rectification because of its short
reverse recovery time t
rr
.
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Reverse voltage V
R
30 V
Repetitive peak reverse voltage V
RRM
30 V
Forward current (Average) I
F(AV)
100 mA
Peak forward current I
FM
200 mA
Non-repetitive peak forward I
FSM
1A
surge current
*
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Reverse current I
R1
V
R
= 10 V 0.3 µA
I
R2
V
R
= 30 V 2
Forward voltage V
F1
I
F
= 10 mA 0.38 0.44 V
V
F2
I
F
= 100 mA 0.51 0.58
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 9 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 100 mA 1 ns
I
rr
= 10 mA, R
L
= 100 Ω
■ Electrical Characteristics T
a
=
25°C ±
3°C
Marking Symbol: 8N
Unit: mm
0.80
+0.05
–0.03
0.60
+0.05
–0.03
0.12
+0.05
–0.02
1.20
+0.05
–0.03
0
+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5˚
5˚
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4.
*
: t
rr
measurement circuit
1: Anode
2: Cathode
SSMini2-F1 Package
Note)
*
:
The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
90%
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 10 mA
t
r
t
p
t
rr
I
F
t
t
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form
Analyzer
(SAS-8130)
R
i
= 50 Ω
V
R
A
This product complies with the RoHS Directive (EU 2002/95/EC).
