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Publication date: November 2003 SKF00062BED
Switching Diodes
MA2S101
Silicon epitaxial planar type
For switching circuits
■ Features
• High breakdown voltage: V
R
= 250 V
• Small terminal capacitance C
t
• Suitable for high-density mounting
■ Absolute Maximum Ratings T
a
= 25°C
Unit: mm
Parameter Symbol Rating Unit
Reverse voltage V
R
250 V
Repetitive peak reverse voltage V
RRM
250 V
Forward current I
F
100 mA
Peak forward current I
FM
225 mA
Non-repetitive peak forward I
FSM
500 mA
surge current
*
Junction temperature T
j
150 °C
Storage temperature T
stg
−55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 70 mA 1.2 V
Reverse current I
R
V
R
= 250 V 1.0 µA
Terminal capacitance C
t
V
R
= 0 V, f = 1 MHz 3.0 pF
Reverse recovery time
*
t
rr
I
F
= I
R
= 10 mA
60 ns
I
rr
= 1 mA , R
L
= 100 Ω
■ Electrical Characteristics T
a
= 25°C ± 3°C
Marking Symbol: 1P
1: Anode
2: Cathode
EIAJ: SC-79 SSMini2-F1 Package
Bias Application Unit N-50BU
90%
Pulse Generator
(PG-10N)
R
s
= 50 Ω
Wave Form Analyzer
(SAS-8130)
R
i
= 50 Ω
t
p
= 2 µs
t
r
= 0.35 ns
δ = 0.05
I
F
= I
R
= 10 mA
R
L
= 100 Ω
10%
Input Pulse Output Pulse
I
rr
= 1 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
0.80
+0.05
–0.03
0.60
+0.05
–0.03
0.12
+0.05
–0.02
1.20
+0.05
–0.03
0
+0
–0.05
0.30±0.05
0.01±0.01
1.60±0.05
0.01±0.01
1
2
0.80±0.05(0.80)
(0.60)
(0.15)
(0.60)
5˚
5˚
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 20 MHz.
3.
*
: t
rr
measurement circuit
Note)
*
:t = 1 s
This product complies with the RoHS Directive (EU 2002/95/EC).