Transistors
1
Publication date: May 2007 SJC00393AED
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4656G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1791G
■ Features
• High transition frequency f
T
• Small collector output capacitance (Common base, input open cir-
cuited) C
ob
• SS-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
■ Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
CBO
50 V
Collector-emitter voltage (Base open) V
CEO
50 V
Emitter-base voltage (Collector open) V
EBO
5V
Collector current I
C
50 mA
Collector power dissipation P
C
125 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to +125 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
CBO
I
C
= 10 µA, I
E
= 050V
Collector-emitter voltage (Base open) V
CEO
I
C
= 1 mA, I
B
= 050V
Emitter-base voltage (Collector open) V
EBO
I
E
= 10 µA, I
C
= 05V
Collector-base cutoff current (Emitter open)
I
CBO
V
CB
= 10 V, I
E
= 0 0.1 µA
Collector-emitter cutoff current (Base open)
I
CEO
V
CE
= 10 V, I
B
= 0 100 µA
Forward current transfer ratio
*
h
FE
V
CE
= 10 V, I
C
= 2 mA 200 500
Collector-emitter saturation voltage V
CE(sat)
I
C
= 10 mA, I
B
= 1 mA 0.06 0.3 V
Transition frequency f
T
V
CB
= 10 V, I
E
= −2 mA, f = 200 MHz 250 MHz
Collector output capacitance C
ob
V
CB
= 10 V, I
E
= 0, f = 1 MHz 1.5 pF
(Common base, input open circuited)
■ Electrical Characteristics T
a
= 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
*
: Rank classification
Rank Q R
h
FE
200 to 400 250 to 500
■ Package
• Code
SSMini3-F3
• Marking Symbol: AM
• Pin Name
1.Base
2.Emitter
3.Collector
